DocumentCode :
511545
Title :
The hybrid SET activity at INRIM
Author :
Enrico, E. ; Amato, G.
Author_Institution :
Electromagn. Div., Nat. Inst. of Metrol. Res., Turin, Italy
fYear :
2009
fDate :
26-30 July 2009
Firstpage :
559
Lastpage :
562
Abstract :
The hybrid Single Electron Transistor is a promising device for the realization of an accurate standard for the electrical current. Recently, it has been demonstrated that SET in hybrid configuration SINIS or NISIN (S= Superconductor, N=Normal metal) can work as electron turnstile, with a very low uncertainties due to uncontrolled tunnelling events. At INRIM Single Electron Transistors (SET) are realized by means of two alternative approaches. The first consists in the shadow mask evaporation technique. The second is the Self aligning in-line technique. The two approaches employed at INRIM in realizing hybrid SETs will be described in detail, and critically discussed.
Keywords :
single electron transistors; superconductor-insulator-superconductor devices; superconductor-normal-superconductor devices; INRIM; NISIN configuration; SINIS configuration; electron turnstile; hybrid SET activity; single electron transistor; uncontrolled tunnelling events; Electrodes; Frequency; Lithography; Metrology; Nanoscale devices; Resists; Single electron transistors; Sputtering; Tunneling; Uncertainty; Dolan technique; HSET; SAIL; e-beam lithography; metrology; tunnel junction;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanotechnology, 2009. IEEE-NANO 2009. 9th IEEE Conference on
Conference_Location :
Genoa
ISSN :
1944-9399
Print_ISBN :
978-1-4244-4832-6
Electronic_ISBN :
1944-9399
Type :
conf
Filename :
5394738
Link To Document :
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