• DocumentCode
    511553
  • Title

    Amorphous-nanocrystalline silicon plasma enhanced CVD grown on porous alumina substrate

  • Author

    Khodin, A. ; Joong-Kee, Lee ; Chang-Sam, Kim ; Sang-Ok, Kim

  • Author_Institution
    Battery Res. Center, Korea Inst. of Sci. & Technol. (KIST), Seoul, South Korea
  • fYear
    2009
  • fDate
    26-30 July 2009
  • Firstpage
    540
  • Lastpage
    542
  • Abstract
    The novel composite amorphous/nanocrystalline thin-film silicon has been fabricated by plasma-enhanced CVD using template porous alumina substrate. The layers possess of specific non-planar morphology and contain silicon nanocrystals of 2-4 nm diameter, as well as ¿bunches¿ of elongated nanocrystals composing honeycomb-like net. The results obtained could be used in new composite materials and structures for photovoltaics, photonics and ionics.
  • Keywords
    amorphous semiconductors; composite materials; elemental semiconductors; nanostructured materials; plasma CVD; porous materials; semiconductor thin films; silicon; Al2O3; Si; amorphous-nanocrystalline silicon; composite materials; honeycomb-like net; ionics; nonplanar morphology; photonics; photovoltaics; plasma enhanced CVD; porous alumina substrate; semiconductor thin films; Amorphous materials; Composite materials; Morphology; Nanocomposites; Nanocrystals; Photovoltaic cells; Plasma materials processing; Semiconductor thin films; Silicon; Substrates; CVD; alumina; amorphous silicon; composite material; nanocrystals; thin film;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology, 2009. IEEE-NANO 2009. 9th IEEE Conference on
  • Conference_Location
    Genoa
  • ISSN
    1944-9399
  • Print_ISBN
    978-1-4244-4832-6
  • Electronic_ISBN
    1944-9399
  • Type

    conf

  • Filename
    5394747