DocumentCode
511553
Title
Amorphous-nanocrystalline silicon plasma enhanced CVD grown on porous alumina substrate
Author
Khodin, A. ; Joong-Kee, Lee ; Chang-Sam, Kim ; Sang-Ok, Kim
Author_Institution
Battery Res. Center, Korea Inst. of Sci. & Technol. (KIST), Seoul, South Korea
fYear
2009
fDate
26-30 July 2009
Firstpage
540
Lastpage
542
Abstract
The novel composite amorphous/nanocrystalline thin-film silicon has been fabricated by plasma-enhanced CVD using template porous alumina substrate. The layers possess of specific non-planar morphology and contain silicon nanocrystals of 2-4 nm diameter, as well as ¿bunches¿ of elongated nanocrystals composing honeycomb-like net. The results obtained could be used in new composite materials and structures for photovoltaics, photonics and ionics.
Keywords
amorphous semiconductors; composite materials; elemental semiconductors; nanostructured materials; plasma CVD; porous materials; semiconductor thin films; silicon; Al2O3; Si; amorphous-nanocrystalline silicon; composite materials; honeycomb-like net; ionics; nonplanar morphology; photonics; photovoltaics; plasma enhanced CVD; porous alumina substrate; semiconductor thin films; Amorphous materials; Composite materials; Morphology; Nanocomposites; Nanocrystals; Photovoltaic cells; Plasma materials processing; Semiconductor thin films; Silicon; Substrates; CVD; alumina; amorphous silicon; composite material; nanocrystals; thin film;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology, 2009. IEEE-NANO 2009. 9th IEEE Conference on
Conference_Location
Genoa
ISSN
1944-9399
Print_ISBN
978-1-4244-4832-6
Electronic_ISBN
1944-9399
Type
conf
Filename
5394747
Link To Document