• DocumentCode
    511559
  • Title

    Tunneling through hydrogen bonds and possibility of the molecular quantum dot transistor

  • Author

    Fujihashi, Chugo

  • Author_Institution
    Dept. Appl. Comput. Sci., Tokyo Polytech. Univ., Atsugi, Japan
  • fYear
    2009
  • fDate
    26-30 July 2009
  • Firstpage
    619
  • Lastpage
    622
  • Abstract
    Hydrogen bonds have important role in bio-nanotechnology and have particularly significant meaning in the recognition bonding of double stranded DNA. Furthermore the bonds are used in a reading process by the artificial DNA sequence reader, and they determine characteristics of the currents through the header atom probes. As two principal factors in various interaction energies in the hydrogen bond, the electrostatic interaction and the charge transfer interaction are large. The electrostatic means the bonding is given by a static electrical attractive force, and the both side atoms connected by the force configure an electrical capacitance. Therefore it can be regarded that the capacitance configures a tunnel barrier. The charge transfer interaction gives an origin of currents through the bonds. Based on the consideration about the current characteristics, the molecular quantum dot transistor including two NH3 and two H2O is suggested.
  • Keywords
    DNA; biomolecular electronics; charge exchange; hydrogen bonds; molecular biophysics; nanobiotechnology; quantum dots; transistors; tunnelling; artificial DNA sequence reader; bionanotechnology; charge transfer interaction; double stranded DNA; electrical capacitance; electrostatic interaction; header atom probes; hydrogen bonds; molecular quantum dot transistor; recognition bonding; static electrical attractive force; tunneling; Bionanotechnology; Bonding; Charge transfer; DNA; Electrostatics; Hydrogen; Quantum capacitance; Quantum dots; Sequences; Tunneling; hydrogen bond; quantum dot; transistor; tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology, 2009. IEEE-NANO 2009. 9th IEEE Conference on
  • Conference_Location
    Genoa
  • ISSN
    1944-9399
  • Print_ISBN
    978-1-4244-4832-6
  • Electronic_ISBN
    1944-9399
  • Type

    conf

  • Filename
    5394753