Title :
Tunnel magneto-resistance effect and giant hall effect of some magnetic thin film multilayers
Author :
Neamtu, Jenica ; Volmer, Marius
Author_Institution :
Magn., Micro & Nanostructured Mater. Dept., Nat. Inst. for R.& D. in Electr. Eng., Bucharest, Romania
Abstract :
The magneto-transport properties of ferromagnetic based multilayers are dependent on the film thickness, the surface roughness, the nature of the interlayer and pining layer used for exchange biasing. We investigate how the nature of the spacer-layer affects the magnetoresistance and Hall effect properties of the magnetic multilayers. The effective thicknesses of the oxide layers were estimated by tunnel effect measurements and compared with in situ quartz microbalance measurements.
Keywords :
Hall effect; Permalloy; alumina; cobalt; copper; iron alloys; magnetic multilayers; magnetic thin films; magnetoresistance; manganese alloys; nanostructured materials; silicon; silicon compounds; Si-SiO2-Ni80Fe20-Al2O3-Ni80Fe20; Si-SiO2-Ni80Fe20-Al2O3-Ni80Fe20-FeMn-Ni80Fe20; Si-SiO2-Ni80Fe20-Co-Al2O3-Co-Ni80Fe20-FeMn-Ni80Fe20; Si-SiO2-Ni80Fe20-Co-Cu-Co-Ni80Fe20-FeMn-Ni80Fe20; ferromagnetic based multilayers; giant Hall effect; in situ quartz microbalance measurements; magnetic thin film multilayers; multilayered nanostructures; oxide layers; spacer-layer affects; tunnel magneto-resistance effect; Anisotropic magnetoresistance; Giant magnetoresistance; Hall effect; Magnetic anisotropy; Magnetic films; Magnetic multilayers; Magnetic properties; Perpendicular magnetic anisotropy; Saturation magnetization; Tunneling magnetoresistance; Hall effect; anisotropic magnetoresistance effect; microstructure; thin films; tunneling magnetoresistance;
Conference_Titel :
Nanotechnology, 2009. IEEE-NANO 2009. 9th IEEE Conference on
Conference_Location :
Genoa
Print_ISBN :
978-1-4244-4832-6
Electronic_ISBN :
1944-9399
