DocumentCode :
511744
Title :
Evaluation of the state-of-the art statistical leakage estimation methods using the BSIM4 transistor model
Author :
Kim, Jinwook ; Kim, Wook ; Kim, Young Hwan
Author_Institution :
Div. of Electr. & Comput. Eng., Pohang Univ. of Sci. & Technol., Pohang, South Korea
fYear :
2009
fDate :
14-16 Dec. 2009
Firstpage :
409
Lastpage :
412
Abstract :
Due to the continued scaling down of the semiconductor process technology, the necessity for variation aware leakage estimation is being emphasized today. Several statistical leakage estimation (SLE) methods have been proposed to deal with the process variation. The state-of-the art SLE methods show pretty accurate results when the BSIM3 transistor model is used. However, because the variation of leakage current has a non lognormal distribution in the recent transistor model BSIM4, the state-of-the art SLE methods are losing their effectiveness. In this paper, we verify the accuracy of the state-of-the art SLE methods using the BSIM4 model, and compare those results to the results obtained by using the BSIM3 model. In the experiments using ISCAS-85 benchmark circuits, the results obtained by using the BSIM4 model showed an average leakage mean and standard deviation errors of 18% and 19%, respectively. On the other hand, the results obtained by using the BSIM3 model showed more accurate results that average leakage mean and standard deviation errors of 2.17% and 4.8%, respectively.
Keywords :
MOSFET; leakage currents; semiconductor device models; semiconductor process modelling; BSIM3 transistor model; BSIM4 transistor model; ISCAS-85 benchmark circuits; MOSFET; leakage current modeling; nonlognormal distribution; semiconductor process technology; short-channel effect; standard deviation errors; statistical leakage estimation methods; Art; Charge carriers; Circuits; Electron beams; Probes; Radiative recombination; Scanning electron microscopy; Semiconductor materials; Spontaneous emission; State estimation; BSIM4; Leakage; Statistical Leakage Estimation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Circuits, ISIC '09. Proceedings of the 2009 12th International Symposium on
Conference_Location :
Singapore
Print_ISBN :
978-9-8108-2468-6
Type :
conf
Filename :
5403702
Link To Document :
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