High frequency drain current noise modeling in MOSFETs under sub-threshold condition

Author

Chan, L.H.K. ; Yeo, K.S. ; Chew, K.W.J. ; Ong, S.N. ; Loo, X.S. ; Boon, C.C. ; Do, M.A.

Author_Institution

Centre for Integrated Circuits&Syst., Nanyang Technol. Univ., Singapore, Singapore

fYear

2009

fDate

14-16 Dec. 2009

Firstpage

310

Lastpage

313

Abstract

A new high frequency drain current noise model was developed for MOSFETs under sub-threshold condition. A simple parameter extraction technique is proposed, which utilizes Y-parameter analysis on the RF small-signal equivalent circuit. Good agreement has been obtained between the predicted and measured results up to 20 GHz.

Keywords

MOSFET; equivalent circuits; microwave field effect transistors; semiconductor device models; semiconductor device noise; MOSFETs; RF small-signal equivalent circuit; Y-parameter analysis; frequency 20 GHz; high frequency drain current noise model; parameter extraction; sub-threshold condition; Annealing; Frequency; Gallium arsenide; III-V semiconductor materials; MOSFETs; Materials science and technology; Optical pulses; Pulsed laser deposition; Semiconductor diodes; Semiconductor lasers; De-embedding; High frequency noise; MOSFET; Noise modeling; RF MOS transistor noise; RFCMOS noise; Sub-threshold noise; Weak inversion noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Circuits, ISIC '09. Proceedings of the 2009 12th International Symposium on

Conference_Location

Singapore

Print_ISBN

978-9-8108-2468-6

Type

conf

Filename

5403709