Investigating the effects of the number of stages on phase noise in CMOS ring oscillators

Author

Zhu, Wei-Jie ; Ma, Jian-Guo

Author_Institution

Sch. of Electron. Eng., Univ. of Electron. Sci. & Technol. of China, Chengdu, China

fYear

2009

fDate

14-16 Dec. 2009

Firstpage

612

Lastpage

615

Abstract

This article focuses on effects of the number of stages on phase noise in CMOS ring oscillators for a given oscillation frequency by comparing several phase noise models. Expressions of phase noise due to white noise and flicker noise in single-ended and differential ring oscillator are described and parameters affecting the phase noise especially the number of stages and gate length are studied. After derivations and analysis, explicit design implications arising form these theories are given for low phase noise design.

Keywords

CMOS integrated circuits; flicker noise; oscillators; phase noise; white noise; CMOS ring oscillators; differential ring oscillator; flicker noise; oscillation frequency; phase noise models; single-ended ring oscillator; white noise; 1f noise; CMOS technology; Capacitance; Frequency; Integrated circuit noise; Phase noise; Ring oscillators; Semiconductor device modeling; Semiconductor device noise; White noise; Ring oscillator; flicker noise; phase noise; the number of stages; white noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Circuits, ISIC '09. Proceedings of the 2009 12th International Symposium on

Conference_Location

Singapore

Print_ISBN

978-9-8108-2468-6

Type

conf

Filename

5403728