DocumentCode :
5118
Title :
A Technology Overview of the PowerChip Development Program
Author :
Araghchini, Mohammad ; Jun Chen ; Doan-Nguyen, Vicky ; Harburg, Daniel V. ; Donghyun Jin ; Jungkwun Kim ; Min Soo Kim ; Seungbum Lim ; Bin Lu ; Piedra, Daniel ; Jizheng Qiu ; Ranson, John ; Min Sun ; Xuehong Yu ; Hongseok Yun ; Allen, Mark G. ; del Alamo,
Author_Institution :
Massachusetts Inst. of Technol., Cambridge, MA, USA
Volume :
28
Issue :
9
fYear :
2013
fDate :
Sept. 2013
Firstpage :
4182
Lastpage :
4201
Abstract :
The PowerChip research program is developing technologies to radically improve the size, integration, and performance of power electronics operating at up to grid-scale voltages (e.g., up to 200V) and low-to-moderate power levels (e.g., up to 50W) and demonstrating the technologies in a high-efficiency light-emitting diode driver, as an example application. This paper presents an overview of the program and of the progress toward meeting the program goals. Key program aspects and progress in advanced nitride power devices and device reliability, integrated high-frequency magnetics and magnetic materials, and high-frequency converter architectures are summarized.
Keywords :
driver circuits; integrated circuit reliability; light emitting diodes; magnetic materials; power integrated circuits; PowerChip development program; PowerChip research program; device reliability; grid-scale voltage; high-efficiency light-emitting diode driver; high-frequency converter architecture; integrated high-frequency magnetics; low-to-moderate power level; magnetic material; nitride power device; power electronics; Capacitors; Inductors; Magnetics; Power electronics; Prototypes; Switches; Voltage control; Gallium nitride; PwrSoC; high frequency (HF); integrated magnetics; integrated power converter; light-emitting diode (LED) driver;
fLanguage :
English
Journal_Title :
Power Electronics, IEEE Transactions on
Publisher :
ieee
ISSN :
0885-8993
Type :
jour
DOI :
10.1109/TPEL.2013.2237791
Filename :
6408389
Link To Document :
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