Title :
High-accuracy and power-efficient switched-current memory cell
Author :
Tang, Xian ; Pun, Kong-Pang
Author_Institution :
Dept. of Electron. Eng., Chinese Univ. of Hong Kong, Hong Kong, China
Abstract :
In this paper, a simple technique to realize a switched-current memory cell with high accuracy and power efficiency is presented. By setting the memory transistors in triode region, this design reduces distortions due to threshold voltage mismatch as well as clock feedthrough. These characteristics are deduced from theory and verified by simulations. Designed in a 0.18-¿m CMOS process, the switched-current memory cell achieves a simulated performance of over 93.26 dB SINAD at the sampling rate of 2 MS/s with the input signal at the Nyquist frequency of 0.999 MHz. The power consumption is 242 ¿W with a 128 ¿A input current range.
Keywords :
CMOS digital integrated circuits; switched current circuits; transistors; triodes; CMOS process; Nyquist frequency; SINAD; input current range; memory transistors; power 242 muW; power consumption; power-efficient switched-current memory cell; sampling rate; size 0.18 mum; triode region; CMOS process; Circuits; Clocks; Energy consumption; Harmonic distortion; Impedance; Power engineering and energy; Signal sampling; Switches; Threshold voltage; distortion; switched-current memory cell; triode region;
Conference_Titel :
Integrated Circuits, ISIC '09. Proceedings of the 2009 12th International Symposium on
Conference_Location :
Singapore
Print_ISBN :
978-9-8108-2468-6
