Excimer laser-annealed dopant segregated schottky (ELA-DSS) si nanowire gate-all-around (GAA) pFET

Author

Chin, Y.K. ; Pey, K.L. ; Singh, N. ; Lu, W.J. ; Lo, G.Q. ; Tan, L.H. ; Wang, X.C. ; Zheng, H.Y. ; Chan, L.

Author_Institution

Sch. of EEE, Nanyang Technol. Univ., Singapore, Singapore

fYear

2009

fDate

14-16 Dec. 2009

Firstpage

141

Lastpage

143

Abstract

We report the first demonstration of pulsed excimer laser annealing (ELA) integrated with dopant segregation method for source/drain junction engineering of gate-all-around (GAA) silicon nanowire P-FETs. It is found that the ultra-fast ELA induces higher boron pile-up at the silicide/silicon junction, resulting in performance enhancement of the devices. The laser annealing improves the average I_ON by 37% as well as reduces the parasitic series resistance and improves short channel immunity of the device as compared to the devices without being treated with laser annealing.

Keywords

elemental semiconductors; field effect transistors; laser beam annealing; nanowires; segregation; silicon; Si; dopant segregation method; excimer laser-annealed dopant segregated Schottky Si nanowire; gate-all-around pFET; parasitic series resistance; pulsed excimer laser annealing; short channel immunity; source-drain junction engineering; Annealing; Decision support systems; Immune system; MOSFETs; Optical pulses; Pulp manufacturing; Semiconductor device manufacture; Silicidation; Silicides; Silicon on insulator technology; Schottky barrier; dopant segregation; gate-all-around (GAA); laser annealing; silicon nanowire;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Circuits, ISIC '09. Proceedings of the 2009 12th International Symposium on

Conference_Location

Singapore

Print_ISBN

978-9-8108-2468-6

Type

conf

Filename

5403928