High performance HfOx -based resistive RAM devices and its temperature dependent switching

High performance resistive random access memory (RRAM) based on HfO_x has been prepared and its temperature dependant switching has been investigated in this work. It is found that the set and reset voltages decrease with increased temperature, which may be attributed to higher oxygen ion mobility and lower oxygen ions activation potential barrier at the higher temperature. An oxygen vacancy assisted conduction filament formation and rupture can elucidate the switching behavior. Devices also exhibit the multi-bit potentials, which may further increase integration density.