MOSFET-controlled emission from nanoscale silicon field emitters

This publication presents a novel combination of nanoscale silicon field emitters fabricated by focused ion beam implant, subsequent etching and integrated extractor to carry MOSFET-controlled behavior required for future lithography applications. A control range of 2 decades is presented with up to 10 nA of emitted current per array at extraction voltages as low as 10 V. A special focus was put on leakage currents to assure the measured data are really from emission. It is also shown that MOSFETs can not only be used to limit fluctuations but also adjust the emission level though still limiting the fluctuations to a minimum.