DocumentCode
511870
Title
Ground bouncing noise aware sequential MTCMOS circuits with data retention capability
Author
Jiao, Hailong ; Kursun, Volkan
Author_Institution
Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China
fYear
2009
fDate
14-16 Dec. 2009
Firstpage
534
Lastpage
537
Abstract
Reactivation noise is an important reliability concern in standard sequential MTCMOS circuits. The ground bouncing noise, the leakage power consumption, and the data stability of various sequential MTCMOS circuits are evaluated in this paper. The attractive application space of different data retention MTCMOS circuit techniques is identified for various design metrics with a 90 nm CMOS technology.
Keywords
CMOS logic circuits; flip-flops; integrated circuit noise; integrated circuit reliability; sequential circuits; CMOS technology; data retention; data stability; flip-flop; ground bouncing noise; leakage power consumption; reactivation noise; reliability; sequential MTCMOS circuits; size 90 nm; Active circuits; CMOS technology; Circuit noise; Circuit stability; Energy consumption; Flip-flops; Integrated circuit noise; Power engineering computing; Space technology; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Circuits, ISIC '09. Proceedings of the 2009 12th International Symposium on
Conference_Location
Singapore
Print_ISBN
978-9-8108-2468-6
Type
conf
Filename
5403942
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