DocumentCode
511951
Title
Calculation of exciton energy in InAs/InP self-assembled semiconductor quantum wires
Author
Zihuan, Xu ; Yumin, Liu ; Zhongyuan, Yu ; Wenjie, Yao
Author_Institution
Institute of Optical Communications and Optoelectronics, Beijing University of Posts and Telecommunications, China, 100876
Volume
2009-Supplement
fYear
2009
fDate
2-6 Nov. 2009
Firstpage
1
Lastpage
7
Abstract
Theoretical calculations of exciton in InAs/InP self-assembled quantum wires are presented in this paper. The Coulomb interaction between the electron and hole is calculated by using a fast Fourier transformation. In our simulations, strain effects are taken into consideration. Finally, we obtain the exciton binding energy in quantum wires by solving 1D Schrodinger equation along the quantum wire direction.
Keywords
Capacitive sensors; Charge carrier processes; Electron optics; Excitons; Indium phosphide; Optical fiber communication; Photonics; Quantum mechanics; Semiconductor nanostructures; Wires; coulomb interaction; exciton; quantum wires;
fLanguage
English
Publisher
ieee
Conference_Titel
Communications and Photonics Conference and Exhibition (ACP), 2009 Asia
Conference_Location
Shanghai, China
Print_ISBN
978-1-55752-877-3
Electronic_ISBN
978-1-55752-877-3
Type
conf
Filename
5405209
Link To Document