Title :
Electronic structure of quantum dots in (111) direction
Author :
Wei, Zhao ; Yu, Zhongyuan ; Liu, Yumin
Author_Institution :
Key Laboratory of Information Photonics and Optical Communications (Beijing University of Posts and Telecommunications), Ministry of Education. P.O. Box 49(BUPT), 100876, China
Abstract :
Electronic structures of InAs/GaAs cubic and truncated pyramidal quantum dots grown in (111) direction are showed in this paper. Continuum elastic theory is used to determine the strain distributions. Electronic energy levels are calculated by solving a three-dimensional effective mass Shrödinger equation including a strain modified confinement potential and piezoelectric effects. The influence of polarization effect to conduction band of quantum dot is discussed. It is found that polarization distribution is dependent on the shape of quantum dot.
Keywords :
Capacitive sensors; Effective mass; Energy states; Equations; Gallium arsenide; Optical polarization; Piezoelectric effect; Piezoelectric polarization; Quantum dots; Shape; (111) direction; Quantum dot; electronic structure; piezoelectric effect;
Conference_Titel :
Communications and Photonics Conference and Exhibition (ACP), 2009 Asia
Conference_Location :
Shanghai, China
Print_ISBN :
978-1-55752-877-3
Electronic_ISBN :
978-1-55752-877-3
