• DocumentCode
    511971
  • Title

    Synthesis and photoelectrical properties of zinc phthalocyanine-bisphenol A epoxy derivative

  • Author

    Cheng, Wanxi ; Shen, Yue ; Zheng, Fei ; Gu, Feng ; Zhang, Jiangcheng

  • Author_Institution
    School of Materials Science and Engineering, Shanghai University, 200072, China
  • Volume
    2009-Supplement
  • fYear
    2009
  • fDate
    2-6 Nov. 2009
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    A novel soluble zinc phthalocyanine-bisphenol A epoxy derivative (ZnPc-DGEBPA) was synthesized and characterized by infrared (IR), electronic absorption spectra and fluorescence spectra. Electronic absorption spectrum of ZnPc-DGEBPA exhibited characteristic absorption peaks at 367 nm and 710 nm. Fluorescence emission peak was at 458 nm and quantum yield reached 0.33 in N, N-dimethylformamide (DMF). ZnPc-DGEBPA thin films were prepared by dip-coating technology. Current-voltage characteristics of the films were measured and photoconductivity was increased by an order of magnitude compared with dark conductivity, which indicates the product has excellent film forming ability and good photoelectric response.
  • Keywords
    Conductive films; Conductivity measurement; Current measurement; Current-voltage characteristics; Dip coating; Electromagnetic wave absorption; Fluorescence; Infrared spectra; Transistors; Zinc; Bisphenol A epoxy; Dip-coating technique; Electronic absorption spectra; Fluorescence quantum yield; Organic solar cell; Photoelectrical properties; Thin films; Zinc phthalocyanines;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Communications and Photonics Conference and Exhibition (ACP), 2009 Asia
  • Conference_Location
    Shanghai, China
  • Print_ISBN
    978-1-55752-877-3
  • Electronic_ISBN
    978-1-55752-877-3
  • Type

    conf

  • Filename
    5405232