DocumentCode :
511971
Title :
Synthesis and photoelectrical properties of zinc phthalocyanine-bisphenol A epoxy derivative
Author :
Cheng, Wanxi ; Shen, Yue ; Zheng, Fei ; Gu, Feng ; Zhang, Jiangcheng
Author_Institution :
School of Materials Science and Engineering, Shanghai University, 200072, China
Volume :
2009-Supplement
fYear :
2009
fDate :
2-6 Nov. 2009
Firstpage :
1
Lastpage :
6
Abstract :
A novel soluble zinc phthalocyanine-bisphenol A epoxy derivative (ZnPc-DGEBPA) was synthesized and characterized by infrared (IR), electronic absorption spectra and fluorescence spectra. Electronic absorption spectrum of ZnPc-DGEBPA exhibited characteristic absorption peaks at 367 nm and 710 nm. Fluorescence emission peak was at 458 nm and quantum yield reached 0.33 in N, N-dimethylformamide (DMF). ZnPc-DGEBPA thin films were prepared by dip-coating technology. Current-voltage characteristics of the films were measured and photoconductivity was increased by an order of magnitude compared with dark conductivity, which indicates the product has excellent film forming ability and good photoelectric response.
Keywords :
Conductive films; Conductivity measurement; Current measurement; Current-voltage characteristics; Dip coating; Electromagnetic wave absorption; Fluorescence; Infrared spectra; Transistors; Zinc; Bisphenol A epoxy; Dip-coating technique; Electronic absorption spectra; Fluorescence quantum yield; Organic solar cell; Photoelectrical properties; Thin films; Zinc phthalocyanines;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Communications and Photonics Conference and Exhibition (ACP), 2009 Asia
Conference_Location :
Shanghai, China
Print_ISBN :
978-1-55752-877-3
Electronic_ISBN :
978-1-55752-877-3
Type :
conf
Filename :
5405232
Link To Document :
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