Title :
Doping profile effect on picosecond lasing of an internally Q-switched, high-power laser diode
Author :
Lanz, Brigitte ; Vainshtein, Sergey ; Kostamovaara, Juha ; Lantratov, Vladimir ; Kalyuzhnyy, Nikolay
Author_Institution :
Electronics Laboratory, Department of Electrical and Information Engineering, University of Oulu, P.O. Box 4500, 90014, Finland
Abstract :
The recently demonstrated high-power (50W from a 20µm stripe) picosecond (30ps) lasing from a laser diode has led us to address the internal Q-switching phenomenon, discovered four decades ago and not yet fully understood. We found that the realization of a nanosecond or picosecond mode in a diode depends on the doping profile across the structure.
Keywords :
Diode lasers; Doping profiles; Laser modes; Laser radar; Optical pulses; Optical waveguides; P-n junctions; Semiconductor lasers; Solid lasers; Waveguide junctions; doping profile; internal Q-switching; picosecond pulse; semiconductor laser;
Conference_Titel :
Communications and Photonics Conference and Exhibition (ACP), 2009 Asia
Conference_Location :
Shanghai, China
Print_ISBN :
978-1-55752-877-3
Electronic_ISBN :
978-1-55752-877-3
