• DocumentCode
    511984
  • Title

    Photoluminescence properties of Nd-O+-codoped Si-based thin film

  • Author

    Yuan, Meiling ; Li, Chenf ; Leng, Xinli ; Wang, Qingnian

  • Author_Institution
    Department of Physics, Nanchang University, Nanchang, 330031, JiangXi, China
  • Volume
    2009-Supplement
  • fYear
    2009
  • fDate
    2-6 Nov. 2009
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    The photoluminescence(PL) spectra at room temperature for the Si-based samples doped by Nd, O+ by ion implantation are measured.The results show that all the samples possess blue-violet photoluminescence properties under the ultraviolet light excitation and its light emission is stable.The PL spectra has multiple peak structure.The results show the intensity of PL spectra is closely relative to Nd and O+ implantation and to the temperature of thermal annealing.The light emission is more greater for the sample of fisrt O+ then Nd ion-implanted silicon than the one of first Nd then O+ ion-implanted silicon.The light-emitiing mechanism is also analyzed.
  • Keywords
    Energy measurement; Fluorescence; Inorganic materials; Luminescence; Mechanical factors; Neodymium; Photoluminescence; Semiconductor materials; Semiconductor thin films; Temperature distribution; Nd-O+-codoped; Photoluminescence; Si-based emitting films; light-emitting mechanism;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Communications and Photonics Conference and Exhibition (ACP), 2009 Asia
  • Conference_Location
    Shanghai, China
  • Print_ISBN
    978-1-55752-877-3
  • Electronic_ISBN
    978-1-55752-877-3
  • Type

    conf

  • Filename
    5405247
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=511984