DocumentCode :
51220
Title :
Monolithically integrated wavelength-multiplexed DFB laser array with laterally coupled quarter-wave phase-shift gratings defined by interference lithography
Author :
Jingsi Li ; Julian Cheng
Author_Institution :
Dept. of Electr. Eng., Univ. of Texas at Austin, Austin, TX, USA
Volume :
50
Issue :
18
fYear :
2014
fDate :
August 28 2014
Firstpage :
1303
Lastpage :
1305
Abstract :
The first monolithically integrated laterally coupled, multi-wavelength distributed feedback (DFB) laser array using first-order sidewall sampled gratings with equivalent quarter-wave phase shifts defined by interference lithography is experimentally demonstrated. The elements of the monolithic DFB laser array lase strongly monomode, with an average side mode suppression ratio of ~37.3 dB and with a uniform wavelength spacing of ~7.3 nm. The output power under 100 mA bias current ranges from 11.4 to 14.1 mW. The proposed method offers a practical and low-cost method for the fabrication of multi-wavelength monolithic DFB laser arrays without regrowth or e-beam lithography.
Keywords :
diffraction gratings; distributed feedback lasers; light interference; optical retarders; photolithography; semiconductor laser arrays; DFB laser array; SMSR; bias current; interference lithography; laterally coupled quarter-wave phase-shift gratings; monolithically integrated wavelength-multiplexing; power 11.4 mW to 14.1 mW; side mode suppression ratio; wavelength spacing;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el.2014.2118
Filename :
6888574
Link To Document :
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