• DocumentCode
    512204
  • Title

    Q-switched Yb-doped microstructure fiber laser using GaAs as saturable absorber

  • Author

    Fu, Shenggui ; Liu, Xiaojuan

  • Author_Institution
    School of Science, Shandong University of Technology, Zibo China, 255049
  • Volume
    2009-Supplement
  • fYear
    2009
  • fDate
    2-6 Nov. 2009
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    A passive Q-switched Yb-doped microstructure fiber (MF) laser is demonstrated using a GaAs wafer as the saturable absorber. A high Ytterbium-doped fiber with a core diameter of 21 µm and a numerical aperture of 0.04 was used as the active fiber. The large-diameter core allows for greater energy storage than conventional single-mode core designs and the small NA of the core ensures the good beam quality of the laser. A pulse duration as short as 80 ns was obtained with the maximum repetition rate of 830 Hz. The maximum average output power is 5.8 W at 1080 nm wavelength.
  • Keywords
    Absorption; Fiber lasers; Gallium arsenide; Laser beams; Laser modes; Microstructure; Mirrors; Optical design; Pump lasers; Semiconductor lasers; GaAs; Microstructure fiber; Q-switch; laser;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Communications and Photonics Conference and Exhibition (ACP), 2009 Asia
  • Conference_Location
    Shanghai, China
  • Print_ISBN
    978-1-55752-877-3
  • Electronic_ISBN
    978-1-55752-877-3
  • Type

    conf

  • Filename
    5405479