DocumentCode
512204
Title
Q-switched Yb-doped microstructure fiber laser using GaAs as saturable absorber
Author
Fu, Shenggui ; Liu, Xiaojuan
Author_Institution
School of Science, Shandong University of Technology, Zibo China, 255049
Volume
2009-Supplement
fYear
2009
fDate
2-6 Nov. 2009
Firstpage
1
Lastpage
6
Abstract
A passive Q-switched Yb-doped microstructure fiber (MF) laser is demonstrated using a GaAs wafer as the saturable absorber. A high Ytterbium-doped fiber with a core diameter of 21 µm and a numerical aperture of 0.04 was used as the active fiber. The large-diameter core allows for greater energy storage than conventional single-mode core designs and the small NA of the core ensures the good beam quality of the laser. A pulse duration as short as 80 ns was obtained with the maximum repetition rate of 830 Hz. The maximum average output power is 5.8 W at 1080 nm wavelength.
Keywords
Absorption; Fiber lasers; Gallium arsenide; Laser beams; Laser modes; Microstructure; Mirrors; Optical design; Pump lasers; Semiconductor lasers; GaAs; Microstructure fiber; Q-switch; laser;
fLanguage
English
Publisher
ieee
Conference_Titel
Communications and Photonics Conference and Exhibition (ACP), 2009 Asia
Conference_Location
Shanghai, China
Print_ISBN
978-1-55752-877-3
Electronic_ISBN
978-1-55752-877-3
Type
conf
Filename
5405479
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