DocumentCode :
512205
Title :
Polarization-insensitive electro-optical modulator based on polymer-filled silicon cross-slot waveguide
Author :
Wang, Wanjun ; Zhou, Haifeng ; Yang, Jianyi ; Wang, Minghua ; Jiang, Xiaoqing
Author_Institution :
Department of Information Science and Electronics Engineering, Zhejiang University, Hangzhou, 310027, China
Volume :
2009-Supplement
fYear :
2009
fDate :
2-6 Nov. 2009
Firstpage :
1
Lastpage :
6
Abstract :
A silicon cross-slot waveguide filled with electro-optic polymer is proposed to release the polarization-dependent issue of the electro-optic modulator. There are two slots in both the horizontal direction and vertical direction, so this waveguide structure can confine both the TE and TM modes. The four silicon regions can be lightly doped as the electrodes. There is slanted electric field in the slot region when the voltages are applied on the electrodes. The electric field component act at principal optical axis whose electric-optic (EO) coefficient is r33 or r13 can be adjusted by changing the voltages on the four electrodes. With optimal voltages, the effective refractive index of the TE and TM modes can be changed equally. The Mach-Zehnder modulator based on cross-slot waveguide can achieve polarization-insensitive.
Keywords :
Electrodes; Electrooptic modulators; Electrooptical waveguides; Optical devices; Optical polarization; Optical waveguides; Polymers; Silicon; Tellurium; Voltage; Silicon; cross-slot; electric-optic polymer; optical modulator;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Communications and Photonics Conference and Exhibition (ACP), 2009 Asia
Conference_Location :
Shanghai, China
Print_ISBN :
978-1-55752-877-3
Electronic_ISBN :
978-1-55752-877-3
Type :
conf
Filename :
5405480
Link To Document :
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