DocumentCode :
512263
Title :
A trichromatic phosphor-free white light-emitting diode by using adhesive bonding scheme
Author :
Chuai, D.X. ; Guo, X. ; Guan, B.L. ; Zhang, J.L. ; Shen, G.D.
Author_Institution :
Beijing Optoelectronic Technology Laboratory, College of Electronic Information and Control Engineering, Beijing University of Technology, 100124, China
Volume :
2009-Supplement
fYear :
2009
fDate :
2-6 Nov. 2009
Firstpage :
1
Lastpage :
7
Abstract :
A trichromatic phosphor-free white light-emitting diode (LED) has been implemented by using adhesive bonding scheme. The device has been operated as a three-terminal device with independent electrical control of an AlGaInP-based red LED chip and a GaN-based dual-wavelength (blue and green) LED chip. As 25mA and 60mA was injected into the red and blue-green LED chips at room temperature respectively, white light emission could be observed with CIE chromaticity coordinates (0.3330,0.3241), correlated color temperature Tc=5467K and optical power Фe=2.223mW. The electroluminescence measurements also show that the emitted white light is composed of blue, green and red lights, centered at around 452nm, 517nm and 632nm. The fabrication and the electrical and optical performances of such white LED were described.
Keywords :
Bonding; Electrodes; Gallium nitride; Gold; Light emitting diodes; Optical mixing; Phosphors; Quantum well devices; Rapid thermal annealing; Temperature; Adhesive bongding; AlGaInP; GaN/InGaN; Light-emitting diodes; dual-wavelength LED; white LED;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Communications and Photonics Conference and Exhibition (ACP), 2009 Asia
Conference_Location :
Shanghai, China
Print_ISBN :
978-1-55752-877-3
Electronic_ISBN :
978-1-55752-877-3
Type :
conf
Filename :
5405544
Link To Document :
بازگشت