Performance of 650 nm AlGaInP RCLEDs with different p-type DBRs

Resonant cavity light-emitting diodes (RCLEDs) which composed of active region surrounded by two distributed Bragg reflector (DBR) mirrors have been reported in the communication system based on Plastic Optical Fiber (POF) and high brightness application. However, high performance of 650nm AlGaInP RCLED, which is strongly depends on the optimization of DBRs, especially the matched reflectivity between p-type and n-type DBR mirrors, is still difficult to obtain. In this paper, the performance of 650nm RCLEDs including 34-pair AlGaAs/AlAs n-type DBRs and different pairs of AlGaInP/AlInP p-type DBRs have been investigated both theoretically and experimentally. Top emitting chips with the size of 225×225µm² without encapsulation were fabricated under the same conditions, experimental results reveal that the device of optimized DBR mirrors with 10-pair p-type DBRs obtain high efficiency, low turn-on voltage and forward resistance, good temperature stability.