Ge/SiGe RCE photodetectors : A comparative study based on Franz-Keldysh Effect and Quantum Confined Stark Effect

Author

Sen, Gopa ; Mukhopadhyay, Bratati ; Basu, P.K.

Author_Institution

Inst. of Radio Phys. & Electron., Univ. of Calcutta, Kolkata, India

fYear

2009

fDate

14-16 Dec. 2009

Firstpage

1

Lastpage

4

Abstract

Si-based photodetectors are currently studied for providing cheap solution to long haul and short distance communication and optical interconnects. Tensile strained Ge layers grown with suitable barriers show direct gap type I band alignment. We have worked on resonant cavity enhanced (RCE) photodetectors using Ge/SiGe type I structure. Performance of photodetectors using strong quntum confined Stark effect, and Franz-Keldysh Effect in these structures and properties related to photodetection are studied in this paper.

Keywords

Ge-Si alloys; germanium; optical resonators; photodetectors; quantum confined Stark effect; Franz-Keldysh effect; Ge-SiGe; RCE photodetector; band alignment; quantum confined Stark effect; resonant cavity enhanced photodetector; type I structure; Absorption; Detectors; Germanium silicon alloys; Indium gallium arsenide; Photodetectors; Potential well; Quantum computing; Quantum well devices; Silicon germanium; Stark effect; FKE; MQW; QCSE; electroabsorption; electrorefraction; exciton;

fLanguage

English

Publisher

ieee

Conference_Titel

Computers and Devices for Communication, 2009. CODEC 2009. 4th International Conference on

Conference_Location

Kolkata

Print_ISBN

978-1-4244-5073-2

Type

conf

Filename

5407092