Effect of strain on charge centroid location in SiO2/s-Si/SiGe and ZrO2/s-Si/SiGe MOS capacitors

Author

Dey, Munmun ; Chattopadhyay, Sanatan

Author_Institution

Dept. of Electron. Sci., Univ. of Calcutta, Kolkata, India

fYear

2009

fDate

14-16 Dec. 2009

Firstpage

1

Lastpage

4

Abstract

The effect of induced channel strain on surface quantisation at inversion has been studied using SiO₂ and ZrO₂ as the gate dielectrics on strained-Si/SiGe MOS structures. The location of charge centroid and its carrier distribution have been observed to change significantly with high-k gate dielectrics in comparison to SiO₂ and also with the induced strain in the channel. The charge centroid location and peak carrier density have significant impact on the measured oxide thickness and consequently the device parametric values since it alters carrier transport along the channel.

Keywords

Ge-Si alloys; MOS capacitors; carrier density; electrical conductivity; elemental semiconductors; quantisation (quantum theory); silicon; silicon compounds; zirconium compounds; MOS Capacitors; SiO₂-Si-SiGe; ZrO₂-Si-SiGe; capacitance-voltage characteristics; carrier distribution; carrier transport; charge centroid location; device parametric values; high-k gate dielectrics; induced channel strain effect; peak carrier density; quantum confinement; surface quantisation; Capacitive sensors; Charge carrier density; Charge measurement; Current measurement; Density measurement; Dielectric measurements; Germanium silicon alloys; Quantization; Silicon germanium; Thickness measurement; CMOS; charge centroid; high-k material; surface quantization; ultra-thin gate dielectric;

fLanguage

English

Publisher

ieee

Conference_Titel

Computers and Devices for Communication, 2009. CODEC 2009. 4th International Conference on

Conference_Location

Kolkata

Print_ISBN

978-1-4244-5073-2

Type

conf

Filename

5407110