Title :
Effect of strain on charge centroid location in SiO2/s-Si/SiGe and ZrO2/s-Si/SiGe MOS capacitors
Author :
Dey, Munmun ; Chattopadhyay, Sanatan
Author_Institution :
Dept. of Electron. Sci., Univ. of Calcutta, Kolkata, India
Abstract :
The effect of induced channel strain on surface quantisation at inversion has been studied using SiO2 and ZrO2 as the gate dielectrics on strained-Si/SiGe MOS structures. The location of charge centroid and its carrier distribution have been observed to change significantly with high-k gate dielectrics in comparison to SiO2 and also with the induced strain in the channel. The charge centroid location and peak carrier density have significant impact on the measured oxide thickness and consequently the device parametric values since it alters carrier transport along the channel.
Keywords :
Ge-Si alloys; MOS capacitors; carrier density; electrical conductivity; elemental semiconductors; quantisation (quantum theory); silicon; silicon compounds; zirconium compounds; MOS Capacitors; SiO2-Si-SiGe; ZrO2-Si-SiGe; capacitance-voltage characteristics; carrier distribution; carrier transport; charge centroid location; device parametric values; high-k gate dielectrics; induced channel strain effect; peak carrier density; quantum confinement; surface quantisation; Capacitive sensors; Charge carrier density; Charge measurement; Current measurement; Density measurement; Dielectric measurements; Germanium silicon alloys; Quantization; Silicon germanium; Thickness measurement; CMOS; charge centroid; high-k material; surface quantization; ultra-thin gate dielectric;
Conference_Titel :
Computers and Devices for Communication, 2009. CODEC 2009. 4th International Conference on
Conference_Location :
Kolkata
Print_ISBN :
978-1-4244-5073-2
