• DocumentCode
    512644
  • Title

    A compact drift-diffusion current model of strained-Si-Si1-xGex MOSFETs

  • Author

    Chakraborty, Vedatrayee ; Mukhopadhyay, Bratati ; Basu, P.K.

  • Author_Institution
    Inst. of Radio Phys. & Electron., Univ. of Calcutta, Kolkata, India
  • fYear
    2009
  • fDate
    14-16 Dec. 2009
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    In this work, we calculated the drift-diffusion drain current of a strained Si n-channel MOSFET grown on a relaxed Si1-xGex layer using a compact model. The results are compared with the experimental data already reported. The current is also compared with that of unstrained Si n-MOSFET. The effect of strain and oxide thickness are also determined and reported here.
  • Keywords
    Ge-Si alloys; MOSFET; elemental semiconductors; semiconductor device models; silicon; Si-Si1-xGex; compact drift-diffusion current model; oxide thickness; relaxed layer; strain effect; strained n-channel MOSFET; Analytical models; Charge carrier processes; Degradation; Doping; Electron mobility; Germanium silicon alloys; MOSFET circuits; Quantum mechanics; Silicon germanium; Threshold voltage; Si-SiGe MOSFET; drift-diffusion transport; quantization; strained Si;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computers and Devices for Communication, 2009. CODEC 2009. 4th International Conference on
  • Conference_Location
    Kolkata
  • Print_ISBN
    978-1-4244-5073-2
  • Type

    conf

  • Filename
    5407210
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=512644