Title :
Monte - Carlo study of NDR effect in GaN at terahertz frequencies
Author :
Ghosal, A. ; Sarkar, K.
Author_Institution :
Inst. of Radio Phys. & Electron., Univ. of Calcutta, Kolkata, India
Abstract :
We have theoretically studied the velocity-field characteristics in zinc-blende (zb) GaN by solving the Boltzmann transport equation with the help of one-particle Monte-Carlo method. The deformation potential acoustic phonon, polar optical phonon, alloy, impurity and inter-valley phonon scatterings have been included in our computations. At an electric field of approximately 50 kV/cm, the negative differential resistance (NDR) has been observed at temperature T = 300 K. We have found that the self-oscillating frequencies of zb GaN diodes are 2.62 THz, 1.97 THz and 1.57 THz corresponding to diode lengths 0.3¿ m, 0.4¿ m and 0.5¿ m respectively.
Keywords :
Boltzmann equation; III-V semiconductors; Monte Carlo methods; gallium compounds; negative resistance; phonon-defect interactions; phonon-impurity interactions; wide band gap semiconductors; Boltzmann transport equation; GaN; deformation potential acoustic phonon; diode lengths; impurity; intervalley phonon scatterings; negative differential resistance; one-particle Monte Carlo method; polar optical phonon; self-oscillating frequencies; terahertz frequencies; velocity-field characteristics; zinc-blende gallium nitride; Acoustic scattering; Boltzmann equation; Diodes; Electric resistance; Frequency; Gallium nitride; Impurities; Optical computing; Optical scattering; Phonons;
Conference_Titel :
Computers and Devices for Communication, 2009. CODEC 2009. 4th International Conference on
Conference_Location :
Kolkata
Print_ISBN :
978-1-4244-5073-2
