Submillimeter wave generation and low frequency noise in GaN

In this paper we represent our study of the generation of submillimeter waves and noise in GaN based device. The structure is the HFET of GaN and Al_xGa_1-xN. It has been shown that though the usual Gunn effect is weak due to the short length of the sample yet the generation of high frequency in the millimeter and submillimeter band is not impossible. Low frequency flicker noise is also investigated and simulated using the Monte Carlo formalism. The linear as well as the saturation part of the operation of the FET are studied at a fixed drain voltage and at different gate biases. It is observed that the low frequency noise in the device is mainly dominated by the 1/f noise. Further, the noise at a definite frequency and at a definite drain voltage decreases as the gate bias is reduced from positive to negative.