Debye temperature of II–VI and III–V semiconductors

Author

Kumar, V. ; Jha, Vijeta ; Shrivastava, A.K.

Author_Institution

Dept. of Electron. & Instrum., Indian Sch. of Mines Univ., Dhanbad, India

fYear

2009

fDate

14-16 Dec. 2009

Firstpage

1

Lastpage

4

Abstract

The Debye temperature (Â¿_D) of II-VI and III-V zincblende semiconductors has been calculated using plasma frequency formalism recently developed for ternary chalcopyrite semiconductors. Four simple relations have been proposed to calculate the values of Â¿_D. Two are based on plasmon energy (Â¿_p) data and one each on molecular weight (W) and melting temperature (T_m).The calculated values of Â¿_D are compared with the experimental values and the values reported by different workers. Reasonably good agreement has been obtained between them.

Keywords

Debye temperature; II-VI semiconductors; III-V semiconductors; melting point; plasmons; Debye temperature; II-VI semiconductors; III-V semiconductors; melting temperature; molecular weight; plasma frequency formalism; plasmon energy; ternary chalcopyrite semiconductors; zincblende semiconductors; Equations; Frequency; III-V semiconductor materials; Lattices; Light emitting diodes; Photovoltaic cells; Plasma temperature; Plasmons; Temperature measurement; Thermal conductivity; Binary tetrahedral semiconductors; Debye temperature; II–VI and III–V semiconductors;

fLanguage

English

Publisher

ieee

Conference_Titel

Computers and Devices for Communication, 2009. CODEC 2009. 4th International Conference on

Conference_Location

Kolkata

Print_ISBN

978-1-4244-5073-2

Type

conf

Filename

5407255