Monolithic integration in photonics - where is the commercial imperative?

Author

Marsh, John H.

Author_Institution

Dept of Electron. & Electr. Eng., Univ. of Glasgow, Glasgow, UK

fYear

2009

fDate

14-16 Dec. 2009

Firstpage

1

Lastpage

6

Abstract

Photonic integration is required before mass deployment of advanced optoelectronic systems is possible. Several viable technologies for fabrication of monolithic photonic integrated circuits (PICs) have been developed. InP-based PICs have been deployed in telecommunication systems, but the main focus here is GaAs-based PICs capable of delivering energy under precision control to precise locations. Integration technology based on quantum well intermixing is described in the context of device performance and yield. Individually addressable arrays of lasers are described operating in the wavelength range 800 to 980 nm, delivering up to 500 mW per element, and with up to 100 monolithic elements. By placing monolithic arrays side by side powers can be scaled further, with current modules delivering 150 W in continuous wave operation.

Keywords

III-V semiconductors; gallium arsenide; integrated optics; integrated optoelectronics; optical communication equipment; semiconductor laser arrays; GaAs; monolithic arrays; monolithic photonic integrated circuit; optoelectronic system; photonic integration; power 500 mW; quantum well intermixing; wavelength 800 nm to 980 nm; Laser modes; Monolithic integrated circuits; Optical arrays; Optical waveguides; Photonic integrated circuits; Power lasers; Ring lasers; Semiconductor device manufacture; Semiconductor laser arrays; Telecommunications; Optoelectronics; laser arrays; lasers; monolithic integration; photonic integrated circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Computers and Devices for Communication, 2009. CODEC 2009. 4th International Conference on

Conference_Location

Kolkata

Print_ISBN

978-1-4244-5073-2

Type

conf

Filename

5407280