Title :
Application of X-Ray scattering techniques for semiconductor-based quantum structures
Author :
Sharma, Manjula ; Sanyal, Milan K. ; Saha, Biswajit ; Chakraborty, Purushottam
Abstract :
Si-Ge superlattice structures have been prepared by Molecular Beam Epitaxy (MBE) and investigated using X-Ray scattering techniques. The satellite peaks occurring in X-Ray reflectivity and X-Ray diffraction give information about the periodicity of the superlattice. Calculations of the dynamical diffraction reveal that the Ge layer is under compressive strain.
Keywords :
X-ray detection; X-ray reflection; X-ray scattering; compressive strength; elemental semiconductors; germanium; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor superlattices; silicon; MBE; Si-Ge; X-Ray diffraction; X-ray reflectivity; X-ray scattering techiques; compressive strain; molecular beam epitaxy; satellite peaks; semiconductor-based quantum structures; superlattice structures; Capacitive sensors; Molecular beam epitaxial growth; Nonhomogeneous media; Nuclear physics; Optical reflection; Quantum computing; Reflectivity; Superlattices; X-ray diffraction; X-ray scattering; Compressive Strain; MBE; Si-Ge Superlattice; X-Ray scattering;
Conference_Titel :
Computers and Devices for Communication, 2009. CODEC 2009. 4th International Conference on
Conference_Location :
Kolkata
Print_ISBN :
978-1-4244-5073-2
