Title :
A theoretical study of error mechanisms in switched-current circuits
Author :
Abbes, Karim ; Masmoudi, Mohamed
Author_Institution :
Electron., Microtechnol. & Commun. (EMC) Res. Group, Nat. Eng. Sch. of Sfax, Sfax, Tunisia
Abstract :
This paper describes a theoretical study of the main errors in switched-current (SI) cells, such as conductance ratio error, settling time error and charge injection error, and their influence on the output/input transfert characteristic. First, our interest is focused on the study each error mechanism and its effect on the SI memory cell. After that, we studied the influence of their cumulative effect. Finally, we detailed the effect of cumulative error on the integrator level. The most significant non-idealities of SI cell are identified and their cumulative effect on SI cell and SI integrator transfert characteristic are analytically demonstrated.
Keywords :
charge injection; integrated circuit testing; integrated memory circuits; integrating circuits; switched current circuits; charge injection error; conductance ratio error; cumulative error; error mechanisms; settling time error; switched-current cells; switched-current circuits; Analog-digital conversion; Circuits and systems; Clocks; Communication switching; Data conversion; Delay; Electromagnetic compatibility; Signal processing; Switching circuits; Voltage; Δ - Σ Analog to digital converters; Switched-current circuits;
Conference_Titel :
Signals, Circuits and Systems (SCS), 2009 3rd International Conference on
Conference_Location :
Medenine
Print_ISBN :
978-1-4244-4397-0
Electronic_ISBN :
978-1-4244-4398-7
DOI :
10.1109/ICSCS.2009.5414152
