Impact of Profiled LDD Structure on Hot Carrier Degradation of nMOSFET´s

Author

Park, Hoon-Soo ; Kim, Kwang-Soo ; Park, Sang-June ; Oh, Se-Joong ; Lee, Jung-Suck ; Park, Hun-Sub

Author_Institution

System IC R & D Lab., Hyundai Electronics Industries Co., Ltd., San 136-1 Ami-ri Bubal-eub Ichon-si Kyoungki-do, 467-860, Korea Tel: 0336-30-2155, Fax: 0336-30-2112/3. E-mail: parkhs@gw4.hyundai.co.kr

fYear

1996

fDate

9-11 Sept. 1996

Firstpage

991

Lastpage

994

Abstract

The device degradation of profiled LDD nMOSFET due to hot-carrier is studied in detail. It was found that the major degradation mechanism of an LDD type of device was spacer-induced degradation. We proposed the profiled LDD structures which exhibited improvement in lifetime under high field stress. The impoved lifetime correlates with increased depth of peak avalanche region below the Si-SiO2 interface, and thus minimizing hot-carrier generation which is determined by the 2-dimensional device simulator MEDICI. Moreover, by using the additional arsenic implant just after phosphorous LDD implant, spacer-induced hot-carrier degradation was effectively suppressed without deteriorating the short channel effects.

Keywords

Current measurement; Degradation; Electric variables measurement; Energy measurement; Hot carriers; Implants; MOSFET circuits; Stress measurement; Time measurement; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European

Conference_Location

Bologna, Italy

Print_ISBN

286332196X

Type

conf

Filename

5435858