DocumentCode
513630
Title
Ultrathin RTP Oxynitride Dielectrics on Planar, Trench and Three Dimensional Structures
Author
Nguyen, Son V. ; Nguyen, Tue ; Carl, D. ; Pricer, D. ; Korejwa, J.W. ; Dobuzinsky, D.
Author_Institution
IBM Microelectronics Semiconductor R&D Center, Hopewell Junction, New York 12533 USA
fYear
1995
fDate
25-27 Sept. 1995
Firstpage
251
Lastpage
254
Abstract
Single-step in-situ ultrathin (5-12 nm) Rapid Thermal Processing (RTP) silicon oxynitride dielectrics were fabricated on silicon and polysilicon planar and 3-D capacitor structures with sub-half micron dimensions. Physical and electrical characterization results show that these ultrathin dielectrics especially compatible for high density DRAM devices with 3-D stacked capacitors with sub-20 nm narrow fingered orifices.
Keywords
Capacitance; Capacitors; Current measurement; Dielectrics; Microelectronics; Orifices; Rapid thermal processing; Semiconductor films; Silicon; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1995. ESSDERC '95. Proceedings of the 25th European
Conference_Location
The Hague, The Netherlands
Print_ISBN
286332182X
Type
conf
Filename
5435867
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