Ultrathin RTP Oxynitride Dielectrics on Planar, Trench and Three Dimensional Structures

Single-step in-situ ultrathin (5-12 nm) Rapid Thermal Processing (RTP) silicon oxynitride dielectrics were fabricated on silicon and polysilicon planar and 3-D capacitor structures with sub-half micron dimensions. Physical and electrical characterization results show that these ultrathin dielectrics especially compatible for high density DRAM devices with 3-D stacked capacitors with sub-20 nm narrow fingered orifices.