Title :
Analytical theory of gate-induced injection barrier modulation in compensated CMOS-compatible bipolar transistors
Author :
Freund, D. ; Kostka, A.
Author_Institution :
Braun AG, Dept. T-EAE, Frankfurter Strasse 145, D-61476 Kronberg, GERMANY
Abstract :
Experiments on CLBTs, realized in p- or n-well environments reveal significant differences in device behaviour. A new theory, which mainly accounts for injection barrier modulation mechanisms, will be presented to explain the particular performance of the transistors. Due to its physics-based conception, it is preferably suited for an application in a compact model, which will be highlighted and compared with experimental results.
Keywords :
Bipolar transistors; CMOS technology; Circuit synthesis; Doping; Geometry; Low voltage; MOS devices; Performance analysis; Semiconductor process modeling; Structural engineering;
Conference_Titel :
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location :
Bologna, Italy
