Analytical theory of gate-induced injection barrier modulation in compensated CMOS-compatible bipolar transistors

Experiments on CLBTs, realized in p- or n-well environments reveal significant differences in device behaviour. A new theory, which mainly accounts for injection barrier modulation mechanisms, will be presented to explain the particular performance of the transistors. Due to its physics-based conception, it is preferably suited for an application in a compact model, which will be highlighted and compared with experimental results.