Title :
Analysis of the Early-Failure Rate Prediction of Time-Dependent-Dielectric Breakdown in Thin Oxides
Author :
Ogier, J.L. ; Degraeve, R. ; Roussel, P. ; Groeseneken, G. ; Maes, H.E.
Author_Institution :
IMEC, Kapeldreef 75, 3001 Leuven, Belgium
Abstract :
The field and area dependence of the defect related TDDB breakdown mode of MOS-capacitors are investigated, in order to predict the failure rate and to determine screening conditions to guarantee a maximum failure rate during the useful life of the oxide. The application of the E and 1/E-model, together with the oxide thinning model for the defect-related breakdown are compared. A new bimodal distribution model is introduced that takes into account the interdependence of the two breakdown modes.
Keywords :
Area measurement; Data analysis; Dielectric breakdown; Electric breakdown; Integrated circuit reliability; MOS capacitors; MOS integrated circuits; Predictive models; Stress; Testing;
Conference_Titel :
Solid State Device Research Conference, 1995. ESSDERC '95. Proceedings of the 25th European
Conference_Location :
The Hague, The Netherlands
