Title :
Fast transient ESD simulation of the NMOS protection transistor
Author :
Luchies, J.R.M. ; Verhaege ; Kuper, F.G. ; Mouthaan, A.J. ; de Graaff, H.C.
Author_Institution :
MESA Research Institute, University of Twente, EL-TN 3.268, P.O. Box 217, NL-7500 AE, Enschede, The Netherlands, tel. +31 53 894007, e-mail: janmarc@ice.el.utwente.nl
Abstract :
The protective properties of NMOS transistors for the Charged Device Model have been investigated. With 2D device simulation it is shown that the base transition time is the limiting factor for CDM NMOS transistor protection. An improved compact transistor model accounting for intrinsic base resistance is presented.
Keywords :
Bipolar transistors; Circuit simulation; Electronic mail; Electrostatic discharge; MOS devices; MOSFETs; Medical simulation; Protection; Stress; Voltage;
Conference_Titel :
Solid State Device Research Conference, 1995. ESSDERC '95. Proceedings of the 25th European
Conference_Location :
The Hague, The Netherlands
