DocumentCode :
513643
Title :
Early Resistance Change Modelling in Electromigration
Author :
Mouthaan, T. ; Petrescu, V. ; Schoenmaker, W. ; Groot, F. ; Angelescu, S. ; Niehof, J. ; Profirescu, M.D.
Author_Institution :
MESA Research Institute, University of Twente, Enschede, The Netherlands
fYear :
1995
fDate :
25-27 Sept. 1995
Firstpage :
311
Lastpage :
314
Abstract :
A novel model describing resistance curves in terms of material migration through the movement of vacancies and the generation of vacancies and immobile damage, mainly at grain boundaries, due to electrical current flow is presented. It is shown that various measured curves can be well fit. The effects of mechanical stress can also be described. Simulations are shown in bamboo structures (BS) and complex triple point grain boundary structures (CTPGBS). For BS the TRENDY simulator from MESA was used. For CTPGBS a finite element simulation program WVEM developed by TMEC and EDIL and based on the 2-D device simulator PRISM from IMEC has been used.
Keywords :
Aluminum; Conductivity; Electric resistance; Electrical resistance measurement; Electromigration; Grain boundaries; Laplace equations; Metallization; Stress; Strips;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1995. ESSDERC '95. Proceedings of the 25th European
Conference_Location :
The Hague, The Netherlands
Print_ISBN :
286332182X
Type :
conf
Filename :
5435885
Link To Document :
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