Application of Device Simulations to Radiation Hardening Studies

The aim of the device radiation hardening is to reduce the sensitivity of components (military and space applications) to high energy radiations such as X, ¿ and cosmic rays. The main result of the irradiation being the creation of high density electron-hole pairs, time dependent radiation effects can only be simulated by including specific pair generation. This paper presents results for photocurrent induced by a X flash, for the latchup and burnout induced in MOS devices by heavy ions.