Title :
Excimer-Laser Crystallization of Silicon-Germanium
Author :
Ishihara, Ryoichi ; Ishikawa, K. ; Matsumura, M.
Author_Institution :
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152, Japan; Delft Institute of Microelectronics and Submicron, Technology (DIMES), Delft University of Technology, Feldmannweg 17, P.O.Box 5053, 2600 GB
Abstract :
Silicon-germanium film has been successfully crystallized by a single shot of excimer-laser light pulse. The maximum grain size was 0.38 ¿m. Characteristics of the transistors with this film as an active-layer are also presented.
Keywords :
Bonding; Crystallization; Germanium silicon alloys; Grain boundaries; Grain size; MOSFETs; Silicon germanium; Substrates; Surface morphology; Thin film transistors;
Conference_Titel :
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location :
Bologna, Italy
