Statistical Breakdown Measurement Technique for Monitoring Diode-Switch Reliability in Active Matrix LCD Production

Author

Bijlsma, S.J. ; Van Kranenburg, H. ; Nieuwesteeg, KJBM ; Pitt, MG ; Verweij, JF

Author_Institution

MESA research institute, University of Twente, P.O box 217, 7500 AE Enschede, The Netherlands

fYear

1995

fDate

25-27 Sept. 1995

Firstpage

331

Lastpage

334

Abstract

An important aspect in the production of high quality active matrix addressed liquid crystal displays (AMILCDs) is the operational reliability of the electrical switching devices in the active matrix. Failing pixels in the display may occur if the switches on the glass substrate are subject to electrical breakdown. In this study, a measurement method is presented that uses forced electrical breakdown on many samples (10³-10⁴) of thin film diodes (TFDs), that are used as switches in TFD-R displays. The method allows us to obtain information on extrinsic defect densities and failure modes related to the production process, as well as the limits of electrical reliability of the switches.

Keywords

Active matrix addressing; Active matrix liquid crystal displays; Active matrix organic light emitting diodes; Condition monitoring; Electric breakdown; Glass; Liquid crystal displays; Measurement techniques; Production; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Device Research Conference, 1995. ESSDERC '95. Proceedings of the 25th European

Conference_Location

The Hague, The Netherlands

Print_ISBN

286332182X

Type

conf

Filename

5435891