Title :
Opportunities for Standard Silicon Technology in RF&Microwave Applications
Author :
Burghartz, J.N. ; Soyuer, M. ; Jenkins, K.A. ; Kwark, Y.H. ; Ponnapalli, S. ; Ewen, J.F. ; Pence, W.E.
Author_Institution :
IBM Research Division, T.J. Watson Research Center, Yorktown Heights, New York, USA, (914) 945-3246, burgh@watson.ibm.com
Abstract :
Various components for the integration of Monolithic Microwave Integrated Circuits (MMIC´s) in a 0.8 ¿m-BiCMOS silicon technology, such as high-Q spiral inductors and capacitors, broad-band transformers, and varactor diodes are presented and discussed. Inductor Q´s of close to 10 at 2 nH inductance have been achieved by shunting multiple interconnect levels together, by sufficient spacing of the inductor structure from the substrate, and by using high substrate resistivity.
Keywords :
Capacitors; Inductors; Integrated circuit technology; MMICs; Microwave integrated circuits; Microwave technology; Monolithic integrated circuits; Silicon; Spirals; Transformers;
Conference_Titel :
Solid State Device Research Conference, 1995. ESSDERC '95. Proceedings of the 25th European
Conference_Location :
The Hague, The Netherlands
