Analyses of Sub 1/4-Micron MOS-Transistors by Visible Light Emission

As the scaling down of the transistor geometries continuously goes on, basic characterization techniques for the next device generations, especially for device geometries below 0.1¿m, are highly recommended [1]. One interesting tool for this research is the light emission from MOS-transistors operating in deep saturation modes [2][4]. The results of these analyses give new hints for the understanding and fabrication of devices with channel lengths below 0.1¿m.