Electroluminescence Imaging for Defect Characterization in InP based Optoelectronic Devices

We report on the application of electroluminescence imaging to defect characterization and leakage current detection in InP based optoelectronic devices. For InGaAs/InP avalanche photodiodes subjected to electrostatic discharge stress the formation of extended defects on the active photodiode area is shown. Spectrally resolved electroluminescence images of multi quantum well laser diodes at different temperatures evidenced the critical points for the electrical confinement in a buried heterostructure. Furthermore second harmonic generation within the laser itself has been found.