DocumentCode
513673
Title
New 3D Polycrystalline Model of Electromigration Induced Voiding at Interconnect Vias
Author
Ghiti, A. ; O´Neill, A.G. ; Low, K.S. ; Trattles, J.T.
Author_Institution
Department of Electrical and Electronic Engineering, Merz Court, University of Newcastle, Newcastle upon-Tyne NE1 7RU, UK
fYear
1996
fDate
9-11 Sept. 1996
Firstpage
913
Lastpage
916
Abstract
A new three-dimensional computer model for investigating electromigration induced voiding in the presence of multilevel interconnection vias is presented. The model uses the finite element method to obtain the temperature and current density distributions and includes the polycrystalline grain structure of the tracks. It is found that in addition to the effects of hot spots, current crowding and microstructure, the anisotropy of the grain boundary diffusion plays an important role in determining the locations of void formation.
Keywords
Anisotropic magnetoresistance; Conductors; Current density; Electromigration; Finite element methods; Grain boundaries; Legged locomotion; Microstructure; Proximity effect; Temperature distribution;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location
Bologna, Italy
Print_ISBN
286332196X
Type
conf
Filename
5435923
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