The Transverse Field Dependence of the Capture Kinetics of Random Telegraph Signals in Small Area Si MOSFETs

This paper discusses the capture kinetics of a particular class of Random Telegraph Signals (RTS´s) occurring in small area Si MOSFETs. Such RTS´s occur both in n- and p-channel devices and show a strong dependence of the capture time constant on the drain current. This dependence is stronger than predicted by standard Shockley-Read-Hall theory and can be interpreted by assuming tunneling of the carriers in the transverse electric field existing in the oxide Eox. This is studied in detail by changing the substrate bias of the MOSFET, from which a capture cross section is derived, which follows a ¿0 exp(-B/Eox) expression.