Determination of Series Resistance using One Single MOSFET

A novel measurement method to determine the series resistance from one single MOSFET is discussed. Not only the gate voltage dependence of the series resistance Rseries at low drain bias can be measured now but also the increase of the drain series resistance Rd with increasing drain bias. In addition attention is paid to the modeling of the series resistance in the full bias range. The measurement principle is based on the measurement of the (trans) conductance as a function of externally added series resistors keeping the `intrinsic´ bias constant. From the slope of this plot information is obtained about the derivative of the series resistance with respect to terminal bias. At low drain voltage the accuracy of the single transistor measurement technique is comparable with a measurement technique using a set of identical MOSFETs except for the mask channel length [8]. In accordance with our 2-D device simulations it is also found that Rd increases linear with the voltage across the drain resistance due to velocity saturation. The increase of Rd is effectively modelled. Including this model for Rd into a compact MOSFET model better physical based parameters are obtained.