Title :
Comparison of Self-Heating Effects in SOI and GAA Devices
Author :
Francis, P. ; Flandre, D. ; Colinge, J.P. ; Van de Wiele, F.
Author_Institution :
Université catholique de Louvain, Microelectronics Laboratory, Place du Levant 3, 1348 Louvain-la-Neuve, Belgium. Tel: +32 10 47 25 81 - Fax: + 32 10 47 86 67 - Email: francis@dice.ucl.ac.be
Abstract :
Experimental evidence of lesser current reduction caused by self-heating in double-gate GAA transistors, compared to regular SOI MOSFETs, is provided and confirmed by a simple analytical model. The scaling of the buried oxide thickness is discussed in general.
Keywords :
Analytical models; Current measurement; Dielectric substrates; Heating; Laboratories; Land surface temperature; MOSFETs; Microelectronics; Thermal conductivity; Voltage;
Conference_Titel :
Solid State Device Research Conference, 1995. ESSDERC '95. Proceedings of the 25th European
Conference_Location :
The Hague, The Netherlands
