A Lateral Bipolar Transistor on SOI Fabricated by a Direct-Write Sub-100-nm Electron Beam Lithography

A direct-write sub-100-nm electron beam lithography has been used to fabricate a novel lateral bipolar transistor on SOI. Downscaling of base widths into the sub-100-nm-regime could be successfully demonstrated. An innovative, high-temperature-stable W/TiN/Ti metallisation was used to enable base implantation and activation after metal deposition. The devices are characterised by electrical measurements, process simulation is used to estimate the effects of process parameters on the resulting base width. The influence of scaling on device performance is discussed, a relation for base formation is derived.