Title :
Impact of Fast Interface States on Effective Mobility of Heavily-Doped MOSFET´s
Author :
Perron, L. ; Lacaita, A. ; Guzzetti, S. ; Bez, R.
Author_Institution :
Politecnico di Milano, Dipartimento di Elettronica e Informazione and CEQSE-CNR, Piazza L. da Vinci 32 - 20133 Milano, Italy
Abstract :
We show that for MOSFET´s with a heavily doped channel, the well-established experimental procedure for measurement of electron mobility is affected by a systematic error. Due to quantization of electron states in the channel, interface traps close to the conduction-band edge contribute significantly to the gate-channel capacitance, leading to underestimate the mobility in the near-threshold region.
Keywords :
Capacitance; Charge measurement; Current measurement; Doping; Electron mobility; Electron traps; Interface states; MOSFET circuits; Microelectronics; Quantization;
Conference_Titel :
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location :
Bologna, Italy
